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Volatile Precursors for NanoFabrication Vol. 4 No. 3 sigma-aldrich.com ALD Precursors for High κ and Barrier Materials P
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Vol. 4 No. 3
Volatile Precursors for NanoFabrication
ALD Precursors for High κ and Barrier Materials Precursors for Low κ Materials Metal Amidinates High Purity Inorganics and Gases III-V Material Sources Manufacturing Capabilities Custom Packaging Equipment, Books and Software
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Product Index
Precursors for Nanofabrication: For Your Lab or for Your Fab
S
igma-Aldrich is pleased to present our complete line of highpurity organometallics and inorganics for micro and nanoelectronic applications. In this brochure you will find products for all aspects of atomic layer (ALD) and chemical vapor deposition (CVD). We feature precursors for high and low (κ) dielectric materials, transition metals for barrier and metallization applications, III-V materials, and epitaxy gases. This brochure features a discussion of the ALD process and technical
Material Deposited
Product Name
Page
Aluminum sec-butoxide 2 Aluminum tribromide 6 Aluminum trichloride 6 Diethylaluminum ethoxide 2 Tris(ethylmethylamido)aluminum 2 Triethylaluminum 2 Triisobutylaluminum 2 Trimethylaluminum 2 Tris(diethylamido)aluminum 2 Tris(ethylmethylamido)aluminum 2 AIAs, GaAs, InAs Trimethylarsine 8 MgB2, BN, B, Diborane (10% in Hydrogen) 10 B4C, B2O3 Diborane-d6 (10% in D2 or He) 10 B doping Trimethylboron 10 Trimethylboron-d9 10 Co, CoO, CoSi2 Bis(N,N’-Diisopropylacetamidinato)cobalt(II) 4 Dicarbonyl(cyclopentadienyl)cobalt(I) 9 Cu, YBaCuOx, CuO (N,N’-Diisopropylacetamidinato)copper(I) 4 Fe, FeO Bis(N,N’-di-tert-butylacetamidinato)iron(II) 4 Ga2O3, Ga, Gallium tribromide 6 GaN, GaP, GaAs Gallium trichloride (bead or slug) 6 Triethylgallium 7 Triisopropylgallium 7 Trimethylgallium 7 Tris(dimethylamido)gallium 7 Tri-tert-butylgallium 7 Ge, GeO2, GeSi Digermane (10% in H2) 10 Germane 10 Tetramethylgermanium 10 HfO2, Hf3N4 Hafnium(IV) chloride 6 Hafnium(IV) tert-butoxide 2 Tetrakis(diethylamido)hafnium(IV) 2 Tetrakis(dimethylamido)hafnium(IV) 2 Tetrakis(ethylmethylamido)hafnium(IV) 2 In2O3, InN, InP, InAs Indium trichloride 6 In containing Indium(I) iodide (Anhydrous beads) 6 Solar Cells Indium acetylacetonate 7 Indium Tin Oxide Triethylindium 7 La2O3, LaAlO3 Tris(N,N’-Di-tertbutylacetamidinato)lanthanum(III) 4 Mg dopant in III-V Bis(pentanethylcyclopentadienyl)magnesium 9 MoS2, MoO2, Mo Molybdenum hexacarbonyl 6 Molybdemum(V) chloride 6 Molybdenum(VI) fluoride 6 sigma-aldrich.com
Al2O3, Al, AIN, AIP AIAs, LaAIO3, Aluminates
GaN, InGaN, AlGaN, Si3N4
N,N-dimethylhydrazine Ammonia Azidotrimethylsilane
8 8 8
Nb2O5
Niobium(V) chloride Niobium(V) ethoxide
6 9
synopses on key application areas, equipment, books and software of interest to researchers and engineers. Ready to begin? Look through our product index below by end material type and then go to the page to find the products you need. Do you have a precursor in mind but can’t find it in this brochure? Need a precursor for a rareearth oxide or a single source nitride precursor? Contact our Organometallics Product Manager at [email protected].
Material Deposited
Product Name
Ni, NiO P doping, InP, GaP
Bis(methylcyclopentadienyl)nickel(II) Phosphine Phosphine-d3 tert-Butylphosphine Tris(trimethylsilyl)phosphine Cyclopentadienyl(trimethyl)platnium(IV) Bis(ethylcyclopentadienyl)ruthenium(II) Trimethylantimony Tris(dimethylamido)antimony 2,4,6,8-Tetramethylcyclotetrasiloxane Dimethoxydimethylsilane Disilane Methylsilane Octamethylcyclotetrasiloxane Silane Silane-d4 Tris(isopropoxy)silanol Tris(tert-butoxy)silanol Tris(tert-pentoxy)silanol Pentakis(dimethylamido)tantalum(V) Tantalum(V) chloride Tantalum(V) ethoxide Tris(diethylamino)(tert-butylimido)tantalum(V) Bis(diethylamido)bis(dimethylamido)titanium(IV) Tetrakis(diethylamido)titanium(IV) Tetrakis(dimethylamido)titanium(IV) Tetrakis(ethylmethylamido)titanium(IV) Titanium(IV) bromide Titanium(IV) chloride Titanium(IV) tert-butoxide Vanadium(V) oxytriisopropoxide Bis(tert-butylimido)bis(dimethylamido)tungsten(VI) Tungsten hexacarbonyl Tungsten(VI) chloride Tungsten(VI) fluoride Tris(N,N-bis(trimethylsilyl)amide)yttrium(III) Yttrium(III) butoxide solution 0.5M in toluene Diethylzinc Tetrakis(diethylamido)zirconium(IV) Tetrakis(dimethylamido)zirconium(IV) Tetrakis(ethylmethylamido)zirconium(IV) Zirconium(IV) bromide Zirconium(IV) chloride Zirconium(IV) tert-butoxide
Pt, PtO2 Ru, RuO2 Sb Source SiO2/Si3N4/SiC
Ta2O5/TaN
TiN/TiO2
V2O5 W, WO2, WO3, WC
Y2O3, YBaCuOx
ZnO Zr3N4, ZrO2
TO ORDER: Contact your local Sigma-Aldrich office (see back cover), call 1-800-558-9160 (USA), or visit sigma-aldrich.com.
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Atomic Layer Deposition
A
=O
=H
=C
= Al
= Al
=O
Ideal ALD Precursor Characteristics High vapor pressure Thermal stability prior to deposition Ease of handling and transfer Chemisorbs to substrate Aggressive reaction with complementary precursors Noncorrosive to substrate High purity Low hazard by-products
Candidate High κ Materials Material Si3N4/SiO2 Sc2O3 Al2O3 Y2O3 HfO2 ZrO2 LaAlO3 Ta2O5 La2O3 SrTiO3 BaxSr1-xO3
κ) Dielectric constant (κ 5-6 >10 8-9 15 21 22 25 25 25-30 200 300
Ready to scale up? For competitive quotes on larger quantities or custom synthesis, contact Sigma-Aldrich Fine Chemicals at 1-800-336-9719 (USA), or visit www.sigma-aldrich.com/safc.
1.800.231.8327
• • • • • • • •
High κ Materials The miniaturization of integrated devices brings serious challenges to the continued use of current materials. The capacitors used in traditional microelectronic circuits, composed of Si/SiO2/ metal, will not be able to function due to the physical limits of the SiO2 dielectric. At the nanometer dimension, the SiO2 dielectric constant (κ) is not large enough to prevent leakage currents, leading to the unwanted discharge of the capacitor. New higher κ materials are under consideration and are listed in the table. 1.5 -10 nm thick layers of Zr, Hf and Al oxides on silicon, grown by ALD processes exhibit much lower gate leakage than SiO2 of equivalent thickness. Sigma-Aldrich offers a wide array of volatile Al, Hf and Zr precursors for your high κ deposition processes. We can tailor ligand designed to give you the physical properties and purity you demand for your systems.
=O
Service:
Sigma-Aldrich, a leader in High Technology products is proud to present our line of Volatile Precursors for Nanofabrication. These products encompass a wide variety of products to get you the final material phases you need.
= Al
=C
Te c h n i c a l
The ALD mechanism is composed of two separate self-limiting steps: the substrate saturation process and the reactivity between the surface groups and precursor molecules. These requirements place several demands on the ALD precursor molecule. Not every molecule is ideal but we can help you find the material ideal for your application.
=C
=H
=O
1.800.558.9160
=H
= Al
Order:
=C
=H
Atomic Layer Deposition
tomic Layer Deposition (ALD) is recognized as the key technology for the semiconductor industry to break below the 90 nm device node barrier, keeping device miniaturization on track with Moore's Law.1 ALD processes can be used for the deposition of barrier materials,2 nucleation layers, metallization,3 1 2 3 and high κ dielectrics.4 The ALD process is able to meet the demands of microelectronics miniaturization because it is a layer-by-layer build up of materials starting with the chemisorption of molecular precursors (Figure). These precursors are Si Si Si reacted at the substrate surface and the resulting layer is purged of by-products with inert gas.5 The 1. TMAl chemisorbs to 4 5 process is repeated as needed to attain desired film hydroxylated Si surface. 2. Reaction of TMAl evolving characteristics. Because ALD is a self-limiting CH4; excess gases removed deposition process, it offers a high degree of control by inert gas purge. 3. TMAl is reacted with water over film composition, thickness and 100% stepvapor. 6 coverage, even over high aspect ratio steps. 4. After inert purge more TMAl is introduced Si Si Contrast this with traditional CVD processes where 5. Repeated ALD cycles result gas-phase chemical reactions produce the final in Al2O3 film. material to be deposited on the surface. While effective for traditional thick and thin-film applications, CVD does not offer the layer-by-layer control and step coverage of ALD. Furthermore, recent advances in processing technology are allowing for ALD processes to be used in high throughput.
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Precursors for High κ Materials Aluminum Triethylaluminum
Trimethylaluminum
High κ Precursors
J1,0001-3 Purity: 99.99999% CAS No. 75-24-1 MF: (C3H9)Al FW: 72.09 mp: 15 °C bp: 125–126 °C Density: 0.752 g/mL
J1,0001-8 Purity: 99.999% CAS No. 97-93-8 MF: (C2H5)3Al FW: 114.17 mp: -50 °C bp: 128–130 °C @ 50 mmHg Density: 0.835 g/mL
CH3 Al H3C
CH3
Typical ICP-MS results for J1,0001-3 in ppb Ag As Au B Ba Be Bi Ca Cd Co Cr Cu Fe Ga